Postdoctoral Research Assistant in Metal Halide Perovskites
University of Oxford
United Kingdom
General Description
Applications are invited for a Postdoctoral Research Assistant position focused on next-generation semiconductor materials for light-harvesting applications. The role is associated with an EPSRC/UKRI-funded collaborative project titled “Tailoring Structure–Property Relationships in Metal Halide Perovskites at an Atomistic Level.”
The project aims to establish detailed structure–property relationships in hybrid metal-halide semiconductors at atomic resolution. The research will uncover causal links between material microstructure and optoelectronic properties, as well as investigate factors influencing stability in these emerging materials.
This work will be conducted within a coordinated collaborative programme involving leading experts in advanced electron microscopy imaging, first-principles modelling, semiconductor thin-film and device fabrication, and experimental analysis of optoelectronic properties. The successful candidate will contribute to a multidisciplinary effort focused on understanding and optimizing metal halide perovskites for energy and light-harvesting technologies.
The position is available for a fixed-term period of 36 months from the time of appointment. The post-holder will also have opportunities to contribute to teaching activities within the department. The University of Oxford provides an inclusive and diverse workplace environment and encourages applications from candidates of all backgrounds and genders.
Eligibility Criteria
Applicants should possess, or be close to obtaining, a PhD in Physics, Materials Science, Physical Chemistry, or a closely related discipline.
Required expertise/skills
Strong expertise in optical spectroscopy and structural characterization techniques applied to semiconductor materials
Experience with techniques such as time-resolved photoluminescence, absorption spectroscopy, photoconductivity measurements, and X-ray diffraction
Demonstrated knowledge of semiconductor physics and next-generation materials for light-harvesting applications
Experience in analysis and modelling of optoelectronic materials
Desirable experience with thin-film semiconductor deposition, particularly thermal evaporation techniques
Proven ability to conduct independent research and interpret experimental results
Strong record of high-quality academic publications
Ability to collaborate effectively within multidisciplinary research teams
Salary details
Not specified in the source listing.
Application Deadline
30 March 2026 (midday UK time)